1 Q. Q. 5 carry one mark each. Q. Consider a system of linear equations: x y 3z =, x 3y 4z =, and x 4y 6 z = k. The value of k for which the system ha...

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Reynard Griffith

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SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

Q. 1 – Q. 25 carry one mark each. Q.1

Consider a system of linear equations:

x − 2 y + 3 z = −1 , x − 3 y + 4 z = 1 , and −2 x + 4 y − 6 z = k .

The value of k for which the system has infinitely many solutions is ______. Q.2

2 3 A function f ( x) = 1 − x + x is defined in the closed interval [ −1,1] . The value of x , in the

open interval ( −1, 1) for which the mean value theorem is satisfied, is (A) − 1⁄2 Q.3

(B) − 1⁄3

(D) 1/2

Suppose and B are two independent events with probabilities ( ) ≠ 0 and ( ) ≠ 0. Let and be their complements. Which one of the following statements is FALSE? (A) ( ∩ ) = ( ) ( ) (C) ( ∪ ) = ( ) + ( )

Q.4

(C) 1⁄3

(B) ( | ) = ( ) (D) ∩ =

( )

Let z = x + iy be a complex variable. Consider that contour integration is performed along the unit circle in anticlockwise direction. Which one of the following statements is NOT TRUE? (A) The residue of (B) (C)

z at z = 1 is 1/2 z −1 2

=0

∮ ∮

=1

(D) z (complex conjugate of z ) is an analytical function Q.5

4 1 The value of p such that the vector 2 is an eigenvector of the matrix 3 14 _______.

Q.6

In the circuit shown, at resonance, the amplitude of the sinusoidal voltage (in Volts) across the capacitor is ________.

EC

1 2 −4

2 1 is 10

1/13

GATE 2015

Q.7

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

In the network shown in the figure, all resistors are identical with R = 300 Ω. The resistance Rab (in Ω) of the network is ______.

a R R

Rab

R

R

R

R

R

R R

R

R R

R R = 300 Ω R

R

b

Q.8

In the given circuit, the values of V1 and V2 respectively are 4Ω Ι + V2 -

(A) 5 V, 25 V Q.9

2Ι 5A

(B) 10 V, 30 V

4Ω

4Ω

(C) 15 V, 35 V

+ V1 -

(D) 0 V, 20 V

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if (A) both the P-region and the N-region are heavily doped (B) the N-region is heavily doped compared to the P-region (C) the P-region is heavily doped compared to the N-region (D) an intrinsic silicon region is inserted between the P-region and the N-region

Q.10

EC

A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 /cm3. The electron and hole mobilities in the sample are 1200 cm2/V-s and 400 cm2/V-s respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 ×10-19 C. The resistivity of the sample (in Ω-cm) is ____________.

2/13

GATE 2015

Q.11

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

For the circuit with ideal diodes shown in the figure, the shape of the output ( sine wave input ( ) will be +

+

vin

T

0.5T

0

vout −

−

(A)

(B) 0

T

0.5T

0

0.5T

T

0

0.5T

T

(D)

(C) 0

Q.12

) for the given

T

0.5T

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6 V. The output voltage (in volts) is_______.

1kΩ

10V

Q.13

1kΩ

+ VO -

In the circuit shown, the switch SW is thrown from position A to position B at time t = 0. The energy (in μJ) taken from the 3 V source to charge the 0.1 μF capacitor from 0 V to 3 V is

3V

120 Ω

B

SW

A

t=0 0.1 μF

(A) 0.3

EC

(B) 0.45

(C) 0.9

(D) 3

3/13

GATE 2015

Q.14

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

In an 8085 microprocessor, the shift registers which store the result of an addition and the overflow bit are, respectively (A) B and F (B) A and F (C) H and F (D) A and C

Q.15

A 16 Kb (=16,384 bit) memory array is designed as a square with an aspect ratio of one (number of rows is equal to the number of columns). The minimum number of address lines needed for the row decoder is _______.

Q.16

Consider a four bit D to A converter. The analog value corresponding to digital signals of values 0000 and 0001 are 0 V and 0.0625 V respectively. The analog value (in Volts) corresponding to the digital signal 1111 is ________.

Q.17

The result of the convolution (− ) ∗ (A) ( +

Q.18

)

(B) ( −

(− −

)

) is (− +

(C)

)

(D)

(− −

)

The waveform of a periodic signal x (t ) is shown in the figure. x(t) 3 1

-2 -4

-3

-1

4 2

3

t

-3

⎛ t −1 ⎞ ⎟ . The average power of g (t ) is _______. ⎝ 2 ⎠

A signal g (t ) is defined by g (t ) = x ⎜

Q.19

Q.20

Negative feedback in a closed-loop control system DOES NOT (A) reduce the overall gain

(B) reduce bandwidth

(C) improve disturbance rejection

(D) reduce sensitivity to parameter variation

A unity negative feedback system has the open-loop transfer function

( )=

. The

( +1)( +3)

value of the gain K (>0) at which the root locus crosses the imaginary axis is ________. Q.21

The polar plot of the transfer function ( ) (A) (B) (C) (D)

EC

=

10( +1) for 0 ≤ ω < ∞ will be in the +10

first quadrant second quadrant third quadrant fourth quadrant

4/13

GATE 2015

Q.22

SET 1

A sinusoidal signal of 2 kHz frequency is applied to a delta modulator. The sampling rate and step-size Δ of the delta modulator are 20, 000 samples per second and 0.1 V, respectively. To prevent slope overload, the maximum amplitude of the sinusoidal signal (in Volts) is (A) (C)

Q.23

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

1 2π 2

(B)

1

π

(D) π

π

ˆ (t ) sin(2π f c t ) where mˆ (t ) denotes the Hilbert Consider the signal s(t ) = m(t ) cos(2π f c t ) + m transform of m(t ) and the bandwidth of m(t ) is very small compared to f c . The signal s (t ) is a (A) high-pass signal (B) low-pass signal (C) band-pass signal (D) double sideband suppressed carrier signal

Q.24

Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the dependence of Hφ on r, where Hφ is the magnitude of the azimuthal component of magnetic field outside the conductor and r is the radial distance from the conductor? (A)

(B)

Hφ

Hφ

r

r (C)

(D)

Hφ

Hφ

r Q.25

r

The electric field component of a plane wave traveling in a lossless dielectric medium is given by

r z ⎞ ⎛ E ( z, t ) = aˆ y 2 cos ⎜108 t − ⎟ V/m. The wavelength (in m) for the wave is ___________. 2⎠ ⎝

EC

5/13

GATE 2015

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

Q. 26 – Q. 55 carry two marks each. Q.26

Q.27

d2y dy + 2 + y = 0 with y(0) = y′(0) = 1 is The solution of the differential equation 2 dt dt t (A) (2 − t )e

−t (B) (1 + 2t )e

−t (C) (2 + t )e

t (D) (1 − 2t )e

A vector is given by is TRUE? (A) (B) (C) (D)

Q.28

=

−

−

. Which one of the following statements

is solenoidal, but not irrotational is irrotational, but not solenoidal is neither solenoidal nor irrotational is both solenoidal and irrotational

Which one of the following graphs describes the function f(x) = (A)

(B)

(C)

(D)

(x + x + 1) ?

Q.29

2 2 The maximum area (in square units) of a rectangle whose vertices lie on the ellipse x + 4 y = 1 is _______.

Q.30

The damping ratio of a series RLC circuit can be expressed as

R 2C (A) 2L

EC

(B)

2L R 2C

(C)

R C 2 L

(D)

2 L R C

6/13

GATE 2015

Q.31

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

In the circuit shown, switch SW is closed at t = 0. Assuming zero initial conditions, the value of vc(t) (in Volts) at t = 1 sec is ________.

t=0

10 V

Q.32

3Ω

+

SW 2Ω

5 F 6

vc(t)

In the given circuit, the maximum power (in Watts) that can be transferred to the load RL is _______. 2Ω

4 0 Vrms

j2Ω

RL

Q.33

The built-in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance (CJ) at a reverse bias (VR) of 1.25 V is 5 pF, the value of CJ (in pF) when VR = 7.25 V is ________.

Q.34

A MOSFET in saturation has a drain current of 1 mA for VDS = 0.5 V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in kΩ) of the MOSFET is _________.

Q.35

For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are 1 × 1017 cm-3 and 1 × 1015 cm-3, respectively. The lifetimes of electrons in P region and holes in N region are both 100 µs. The electron and hole diffusion coefficients are 49 cm2/s and 36 cm2/s, respectively. Assume kT/q = 26 mV, the intrinsic carrier concentration is 1 × 1010 cm-3, and q = 1.6 × 10-19 C. When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA/cm2) injected from P region to N region is _____________.

Q.36

The Boolean expression F(X,Y,Z) = X Y Z + X Y Z+X Y Z + X Y Z converted into the canonical product of sum (POS) form is

EC

(A) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)

(B) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)

(C) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)

(D) (X+Y+Z)(X+Y+Z)(X+Y+Z)(X+Y+Z)

7/13

GATE 2015

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

Q.37

All the logic gates shown in the figure have a propagation delay of 20 ns. Let A = C = 0 and B = 1 until time t = 0. At t = 0, all the inputs flip (i.e., A = C = 1 and B = 0) and remain in that state. For t > 0, output Z = 1 for a duration (in ns) of ______________.

Q.38

A 3-input majority gate is defined by the logic function M (a, b, c) = ab + bc + ca . Which one of the following gates is represented by the function M ( M ( a, b, c ), M ( a, b, c ), c) ? (A) 3-input NAND gate (C) 3-input NOR gate

Q.39

(B) 3-input XOR gate (D) 3-input XNOR gate

, where > 0. The source For the NMOSFET in the circuit shown, the threshold voltage is is varied from 0 to . Neglecting the channel length modulation, the drain current voltage is represented by as a function of VDD

VSS

(A)

(B) ID

ID

VSS

VSS Vth

VDD – Vth

(C)

(D) ID

ID

VSS

VSS VDD - Vth

EC

VDD – Vth

8/13

GATE 2015

Q.40

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

In the circuit shown, assume that the opamp is ideal. The bridge output voltage V0 (in mV) for δ = 0.05 is _______.

100 Ω 250 (1+δ) Ω

1V

250 (1-δ) Ω V0

+ 250 (1+δ) Ω

250 (1-δ) Ω

100 Ω

Q.41

50 Ω

The circuit shown in the figure has an ideal opamp. The oscillation frequency and the condition to sustain the oscillations, respectively, are R1 R2 −

vout

+

2C

(A) (C)

Q.42

CR CR

R

C

2R

and R1 = R2

(B)

and R1 = R2

(D)

CR CR

and R1 = 4R2 and R1 = 4R2

In the circuit shown, I1 = 80 mA and I2 = 4 mA. Transistors T1 and T2 are identical. Assume that the thermal voltage VT is 26 mV at 27 oC. At 50 oC, the value of the voltage V12 = V1 − V2 (in mV) is _______.

VS I2 V2

T2

EC

I1 + V12

V1

T1

9/13

GATE 2015

Q.43

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

Two sequences [ a, b, c ] and [ A, B, C ] are related as,

1 ⎤ ⎡a ⎤ ⎡ A ⎤ ⎡1 1 ⎢ B ⎥ = ⎢1 W −1 W −2 ⎥ ⎢ b ⎥ 3 3 ⎥⎢ ⎥ ⎢ ⎥ ⎢ −2 W3−4 ⎦⎥ ⎢⎣ c ⎦⎥ ⎣⎢C ⎦⎥ ⎣⎢1 W3

where W3 = e

j

2π 3

.

If another sequence [ p, q, r ] is derived as,

1 ⎤ ⎡1 0 0 ⎤ ⎡ A / 3⎤ ⎡ p ⎤ ⎡1 1 ⎢ q ⎥ = ⎢1 W 1 W 2 ⎥ ⎢ 0 W 2 0 ⎥ ⎢ B / 3⎥ 3 3 ⎥⎢ 3 ⎢ ⎥ ⎢ ⎥⎢ ⎥, 2 4 ⎢⎣ r ⎥⎦ ⎢⎣1 W3 W3 ⎥⎦ ⎢⎣ 0 0 W34 ⎥⎦ ⎢⎣C / 3⎥⎦ then the relationship between the sequences [ p, q, r ] and [ a, b, c ] is

Q.44

(A)

[ p, q, r ] = [b, a, c]

(B)

[ p, q, r ] = [b, c, a]

(C)

[ p, q, r ] = [ c, a, b]

(D)

[ p, q, r ] = [ c, b, a]

For the discrete-time system shown in the figure, the poles of the system transfer function are located at X[n]

Y[n]

−1 6

(A) 2, 3 Q.45

5 6

(B) , 3

(C)

,

(D) 2,

The pole-zero diagram of a causal and stable discrete-time system is shown in the figure. The zero at the origin has multiplicity 4. The impulse response of the system is ℎ[ ]. If ℎ[0] = 1, we can conclude

Im(z)

0.5 4 -0.5

0.5

Re(z)

-0.5

(A) ℎ[ (B) ℎ[ (C) ℎ[ (D) ℎ[ EC

] is real for all ] is purely imaginary for all ] is real for only even ] is purely imaginary for only odd 10/13

GATE 2015

Q.46

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

The open-loop transfer function of a plant in a unity feedback configuration is given as

G(s) =

K ( s + 4) . The value of the gain K (> 0) for which −1 + j 2 lies on the root locus is ( s + 8)( s 2 − 9)

_______. Q.47

A lead compensator network includes a parallel combination of R and C in the feed-forward path. If the transfer function of the compensator is Gc ( s ) =

Q.48

⎛ ⎝

A plant transfer function is given as G ( s ) = ⎜ K P +

s+2 , the value of RC is ________. s+4

KI ⎞ 1 . When the plant operates in a ⎟ s ⎠ s ( s + 2)

unity feedback configuration, the condition for the stability of the closed loop system is (A) K P > Q.49

KI >0 2

(B) 2 K I > K P > 0

P[X = 1] = 0.8

EC

(D) 2 K I > K P

The input X to the Binary Symmetric Channel (BSC) shown in the figure is ‘1’ with probability 0.8. The cross-over probability is 1/7. If the received bit Y = 0, the conditional probability that ‘1’ was transmitted is _______.

P[X = 0] = 0.2

Q.50

(C) 2 K I < K P

X 0 1/7 1

Y 0

6/7 1/7

6/7

1

The transmitted signal in a GSM system is of 200 kHz bandwidth and 8 users share a common bandwidth using TDMA. If at a given time 12 users are talking in a cell, the total bandwidth of the signal received by the base station of the cell will be at least (in kHz) ________.

11/13

GATE 2015

Q.51

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

In the system shown in Figure (a), m(t) is a low-pass signal with bandwidth W Hz. The frequency response of the band-pass filter H( f ) is shown in Figure (b). If it is desired that the output signal ( ) = 10 ( ), the maximum value of (in Hz) should be strictly less than ________.

x(t) = m(t) cos(2400πt)

Amplifier

H( f ) Band-pass filter

y(t) = 10x (t) + x2(t)

z(t)

(a) H( f )

1

-1700

Q.52

0 (b)

-700

1700 f (Hz)

700

1 2 and bit 1 with probability . The emitted bits are 3 3 communicated to the receiver. The receiver decides for either 0 or 1 based on the received value R . It is given that the conditional density functions of R are as

A source emits bit 0 with probability

⎧1 ⎪ , − 3 ≤ x ≤ 1, f R 0 (r ) = ⎨ 4 ⎪⎩0, otherwise,

⎧1 ⎪ , − 1 ≤ x ≤ 5, f R 1 (r ) = ⎨ 6 ⎪⎩0, otherwise.

and

The minimum decision error probability is (A) 0 Q.53

(B) 1/12

(C) 1/9

The longitudinal component of the magnetic field inside an air-filled rectangular waveguide made of a perfect electric conductor is given by the following expression ( , , , ) = 0.1 cos(25

) cos(30.3

) cos(12 × 10

The cross-sectional dimensions of the waveguide are given as mode of propagation inside the waveguide is

Q.54

(A) TM 12

(B) TM 21

(C) TE21

(D) TE12

−

) ( / )

= 0.08 and = 0.033 . The

The electric field intensity of a plane wave traveling in free space is given by the following expression ( , )=

24

cos(

−

In this field, consider a square area 10 cm x 10 cm on a plane power (in mW) passing through the square area is _______.

EC

(D) 1/6

) (V/m) +

= 1. The total time-averaged

12/13

GATE 2015

Q.55

SET 1

ELECTRONICS AND COMMUNICATION ENGINEERING - EC

Consider a uniform plane wave with amplitude (E0) of 10 V/m and 1.1 GHz frequency travelling in air, and incident normally on a dielectric medium with complex relative permittivity (εr) and permeability (μr) as shown in the figure. Air η = 120π Ω

Dielectric μr = 1 – j2 εr = 1 – j2

10 cm

|E| = ?

|E0| = 10 V/m Freq = 1.1 GHz

The magnitude of the transmitted electric field component (in V/m) after it has travelled a distance of 10 cm inside the dielectric region is _________.

END OF THE QUESTION PAPER

EC

13/13

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