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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■
■ ■ ■ ■
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3
APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol
Collector Cut-off Current (V BE = -1.5 V)
V CE = 700 V V CE = 700 V
Emitter-Base Voltage (I C = 0)
I E = 10 mA
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗
V BE(sat) ∗
h FE ∗
I C = 100 mA
Collector Cut-Off Current (I B = 0)
V CE = 400 V
Collector-Emitter Saturation Voltage
IC IC IC IC
= = = =
0.5 A 1A 2.5 A 4A
T j = 125 o C
L = 25 mH
IB IB IB IB
= = = =
I C = 0.5 A IC = 1 A I C = 2.5 A
I B = 0.1 A I B = 0.2 A I B = 0.5 A
DC Current Gain
I C = 10 mA IC = 2 A Group A Group B
V CE = 5 V V CE = 5 V
RESISTIVE LOAD Storage Time Fall Time
V CC = 125 V I B1 = 0.4 A T p = 30 µs
IC = 2 A I B2 = -0.4 A (see fig.2)
INDUCTIVE LOAD Storage Time Fall Time
IC = 2 A V BE(off) = -5 V V clamp = 200 V
I B1 = 0.4 A R BB = 0 Ω (see fig.1)
µA µA V
0.7 1 1.5
V V V V
1.1 1.2 1.3
V V V
10 14 25
100 500 9
0.1 A 0.2 A 0.5 A 1A
Base-Emitter Saturation Voltage
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
BUL128 Safe Operating Areas
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
BUL128 Inductive Load Fall Time
Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
BUL128 Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch 2) Non-inductive Resistor